MB84VD2228XEA Datasheet, PDF (32/63 Pages) Fujitsu Component Limited. – 32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM

MB84VD2228XEA/EE/2229XEA/EE-90
Table 5 Flash Memory Command Definitions
Command
Sequence
Bus First Bus Second Bus
Write _{Write Cycle Write Cycle}
Cycles
Req’d _{Addr. Data Addr. Data}
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr. Data Addr. Data Addr. Data Addr. Data
Read/Reset (Note 1) 1 XXXh F0h —
—
—
———————
Read/Reset Word
(Note 1)
Byte
3
555h
2AAh
AAh
55h
AAAh
555h
555h
F0h RA RD —
AAAh
—
—
—
Word
555h
2AAh
(BA)
555h
Autoselect
3
AAh
55h
90h — — — — — —
Byte
AAAh
555h
(BA)
AAAh
Program
Word
555h
2AAh
555h
4
AAh
55h
A0h PA PD — — — —
Byte
AAAh
555h
AAAh
Chip Erase
Word
6
Byte
555h
2AAh
AAh
55h
AAAh
555h
555h
555h
2AAh
555h
80h
AAh
55h
10h
AAAh
AAAh
555h
AAAh
Word
Sector Erase
6
Byte
555h
2AAh
AAh
55h
AAAh
555h
555h
555h
2AAh
80h
AAh
55h SA 30h
AAAh
AAAh
555h
Sector Erase
Suspend
1
BA B0h —
—
—
———————
Sector Erase
Resume
1
BA 30h —
—
—
———————
Set to
Fast Mode
Word
555h
2AAh
3
AAh
55h
Byte
AAAh
555h
555h
20h —
AAAh
—
—
—
—
—
Fast Program ^Word
(Note 2)
Byte
2
XXXh A0h PA
PD
—
———————
Reset from Word
Fast Mode
(Note 2)
2
Byte
BA
90h
XXXh
F0h
(Note6)
—
———————
Extended
Sector Group
Word
Protection
(Note 3)
Byte
4
XXXh 60h SPA
60h
Query
(Note 4)
Word
55h
1
98h —
—
Byte
AAh
SPA 40h SPA SD —
—
————
———
———
Word
555h
2AAh
555h
Hi-ROM Entry
3
AAh
55h
88h — — — — — —
Byte
AAAh
555h
AAAh
Hi-ROM
Program
(Note 5)
Word
555h
2AAh
555h
4
AAh
55h
A0h PA PD — — — —
Byte
AAAh
555h
AAAh
Hi-ROM
Erase
(Note 5)
Word
6
Byte
555h
2AAh
AAh
55h
AAAh
555h
555h
AAAh
555h
2AAh
80h
AAh
55h HRA 30h
AAAh
555h
Hi-ROM Exit
(Note 5)
Word
Byte
4
555h
2AAh
(HRBA)
555h
AAh
55h
90h XXXh 00h
AAAh
555h
(HRBA)
AAAh
—
—
—
—
Notes: 1. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
2. This command is valid while Fast Mode.
3. This command is valid while RESET=VID.
4. The valid Address is A0 to A6.
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