MB84VD2228XEA Datasheet, PDF (35/63 Pages) Fujitsu Component Limited. – 32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM

MB84VD2228XEA/EE/2229XEA/EE-90
s ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter _{Parameter Description}
Symbol
Test Conditions
ILI Input Leakage Current
VIN = VSS to VCCf, VCCs
ILO Output Leakage Current VOUT = VSS to VCCf, VCCs
ILIT
RESET Inputs Leakage
Current
VCCf = VCCf Max.,VCCs = VCCs Max.,
RESET = 12.5V
ILIA
ACC Input Leakage
Current
VCCf = VCCf Max.,VCCs = VCCs Max.,
WP/ACC = VACC Max
tCYCLE = 5 MHz Byte
Flash VCC Active Current
ICC1f (Read)
(Note 1)
CEf = VIL,
OE = VIH
tCYCLE = 5 MHz Word
tCYCLE = 1 MHz Byte
tCYCLE = 1 MHz Word
ICC2f
Flash VCC Active Current
(Program/Erase) (Note 2)
CEf = VIL, OE = VIH
Flash VCC Active Current
ICC3f (Read-While-Program)
(Note 5)
CEf = VIL, OE = VIH
Byte
Word
Flash VCC Active Current
ICC4f (Read-While-Erase)
(Note 5)
CEf = VIL, OE = VIH
Byte
Word
ICC5f
Flash VCC Active Current
(Erase-Suspend-Program)
CEf = VIL, OE = VIH
ICC1s
SRAM VCC Active Current
VCCs = VCC Max.,
CE1s = VIL,
CE2s = VIH
tCYCLE =10 MHz
ICC2s
SRAM VCC Active Current
CE1s = 0.2 V,
tCYCLE = 10 MHz
CE2s = VCCs – 0.2 V _{tCYCLE = 1 MHz}
VCCf = VCC Max., CEf = VCCf ± 0.3 V
ISB1f Flash VCC Standby Current RESET = VCCf ± 0.3 V,
WP/ACC = VCCf± 0.3 V
ISB2f
Flash VCC Standby Current VCCf = VCC Max., RESET = VSS ± 0.3 V,
(RESET)
WP/ACC = VCCf± 0.3 V
Flash VCC Current
ISB3f (Automatic Sleep Mode)
(Note 3)
VCCf = VCC Max., CEf = VSS ± 0.3 V
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf± 0.3 V
VIN = VCCf± 0.3 V or VSS ± 0.3 V
ISB1s SRAM VCC Standby Current CE1s > VCCs – 0.2 V, CE2s > VCCs – 0.2 V
ISB2s SRAM VCC Standby Current CE2s < 0.2 V
Min.
–1.0
–1.0
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Typ.
—
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Max. Unit
+1.0 µA
+1.0 µA
35 µA
—
20 mA
—
16
mA
—
18
—
7
mA
—
7
—
35 mA
—
51
mA
—
53
—
51
mA
—
53
—
35 mA
—
50 mA
—
50 mA
—
8 mA
1
5 µA
1
5 µA
1
5 µA
—
25 µA
—
25 µA
(Continued)
35