MB84VD2228XEA Datasheet, PDF (40/63 Pages) Fujitsu Component Limited. – 32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM

MB84VD2228XEA/EE/2229XEA/EE-90
• Erase/Program Operations (Flash)
Parameter Symbols
JEDEC Standard
Description
tAVAV
tWC
Write Cycle Time
tAVWL
tAS
Address Setup Time (WE to Addr.)
—
tASO
Address Setup Time to CE Low During Toggle Bit Polling
tWLAX
tAH
Address Hold Time (WE to Addr.)
—
tAHT
Address Hold Time from CE or OE High During Toggle Bit
Polling
tDVWH
tDS
Data Setup Time
tWHDX
tDH
Data Hold Time
—
tOES
Output Enable Setup Time
Read
—
tOEH
Output Enable Hold Time
Toggle and Data Polling
—
tCEPH CE High During Toggle Bit Polling
—
tOEPH OE High During Toggle Bit Polling
tGHEL
tGHEL Read Recover Time Before Write (OE to CEf)
tGHWL
tGHWL Read Recover Time Before Write (OE to WE)
tWLEL
tWS
WE Setup Time (CEf to WE)
tELWL
tCS
CEf Setup Time (WE to CEf)
tEHWH
tWH
WE Hold Time (CEf to WE)
tWHEH
tCH
CEf Hold Time (WE to CEf)
tWLWH
tWP
Write Pulse Width
tELEH
tCP
CEf Pulse Width
tWHWL
tWPH
Write Pulse Width High
tEHEL
tCPH
CEf Pulse Width High
tWHWH1
tWHWH1
Byte Programming Operation
Word Programming Operation
tWHWH2
tWHWH2 Sector Erase Operation (Note 1)
Min.
90
0
15
45
-90
Typ.
—
—
—
—
Max.
—
—
—
—
Unit
ns
ns
ns
ns
0
—
— ns
35
—
— ns
0
—
— ns
0
—
— ns
0
—
— ns
10
—
— ns
20
—
— ns
20
—
— ns
0
—
— ns
0
—
— ns
0
—
— ns
0
—
— ns
0
—
— ns
0
—
— ns
35
—
— ns
35
—
— ns
30
—
— ns
30
—
— ns
—
8
— µs
—
16
— µs
—
1
—
s
(Continued)
40