MB85RC256VPF-G Datasheet, PDF (35/36 Pages) Fujitsu Component Limited. – FUJITSU SEMICONDUCTOR

MB85RC256V
■ MAJOR CHANGES IN THIS EDITION
A change on a page is indicated by a vertical line drawn on the left side of that page.
Page
Section
Change Results
■ FEATURES
1
Revised the Data retention
10 years ( + 85 °C)
→10 years ( + 85 °C), 95 years ( + 55 °C),
over 200 years ( + 35 °C)
12
■ ABSOLUTE MAXIMUM RATINGS
Revised the Storage Temperature
− 40 °C → − 55 °C
■ POWER ON/OFF SEQUENCE
Revised the following description:
“POWER ON SEQUENCE”
→“POWER ON/OFF SEQUENCE”
Deleted the following description:
“VDD pin is required to be rising from 0V because turning the
power-on from an intermediate level may cause malfunctions,
16
when the power is turned on.”
■ FRAM CHARACTERISTICS
Added the following description:
“If the device does not operate within the specified conditions
of read cycle, write cycle or power on/off sequence, memory
data can not be guaranteed.”
Revised the table and Note
DS501-00017-3v0-E
35