MB85RC256VPF-G Datasheet, PDF (12/36 Pages) Fujitsu Component Limited. – FUJITSU SEMICONDUCTOR

MB85RC256V
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Min
Max
Power supply voltage*
VDD
− 0.5
+6.0
V
Input voltage*
Output voltage*
Operation ambient temperature
VIN
VOUT
TA
− 0.5
− 0.5
− 40
VDD + 0.5 ( ≤ 6.0)
V
VDD + 0.5 ( ≤ 6.0)
V
+ 85
°C
Storage temperature
Tstg
− 55
+ 125
°C
*: These parameters are based on the condition that VSS is 0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Power supply voltage*
VDD
2.7
“H” level input voltage*
VIH
VDD × 0.8
“L” level input voltage*
VIL
VSS
Operation ambient temperature
TA
− 40
*: These parameters are based on the condition that VSS is 0 V.
Value
Typ
⎯
⎯
⎯
⎯
Max
5.5
5.5
VDD × 0.2
+ 85
Unit
V
V
V
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
12
DS501-00017-3v0-E