MB85RS256BPNF-G Datasheet, PDF (17/36 Pages) Fujitsu Component Limited. – 256 K (32 K × 8) Bit SPI

MB85RS256B
■ POWER ON/OFF SEQUENCE
If VDD falls down below 2.0 V, VDD is required to be started from 1.0 V or less to prevent malfunctions when
the power is turned on again (see the figure below).
tpd
VDD
tr
tpu
VDD
3.0 V
VIH (Min)
3.0 V
VIH (Min)
1.0 V
VIL (Max)
1.0 V
VIL (Max)
GND
CS
CS >VDD × 0.8*
* : CS (Max) < VDD + 0.5 V
CS : do not care
GND
CS >VDD × 0.8*
CS
Parameter
CS level hold time at power OFF
CS level hold time at power ON
Power supply rising time
Value
Symbol
Unit
Min
Max
tpd
200
⎯
ns
tpu
85
⎯
ns
tr
0.05
200
ms
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
■ FRAM CHARACTERISTICS
Item
Min Max
Unit
Parameter
Read/Write Endurance*¹ 10¹²
⎯
10
⎯
Data Retention*²
95
⎯
≥ 200 ⎯
Times/byte
Years
Operation Ambient Temperature TA = + 85 °C
Operation Ambient Temperature TA = + 85 °C
Operation Ambient Temperature TA = + 55 °C
Operation Ambient Temperature TA = + 35 °C
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates
with destructive readout mechanism.
*2 : Minimun values define retention time of the first reading/writing data right after shipment, and these values
are calculated by qualification results.
■ NOTE ON USE
Data written before performing IR reflow is not guaranteed after IR reflow.
DS501-00021-2v0-E
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