MB85RS256BPNF-G Datasheet, PDF (12/36 Pages) Fujitsu Component Limited. – 256 K (32 K × 8) Bit SPI

MB85RS256B
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Power supply voltage*
VDD
− 0.5
Input voltage*
Output voltage*
Operation ambient temperature
VIN
VOUT
TA
− 0.5
− 0.5
− 40
Storage temperature
Tstg
− 55
*:These parameters are based on the condition that VSS is 0 V.
Rating
Max
+ 4.0
VDD + 0.5
VDD + 0.5
+ 85
+ 125
Unit
V
V
V
°C
°C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Value
Symbol
Unit
Min
Typ
Max
Power supply voltage*
VDD
2.7
3.3
3.6
V
Input high voltage*
VIH
VDD × 0.8
⎯
VDD + 0.5
V
Input low voltage*
VIL
− 0.5
⎯
+ 0.6
V
Operation ambient temperature
TA
− 40
⎯
+ 85
°C
*:These parameters are based on the condition that VSS is 0 V.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
12
DS501-00021-2v0-E