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MB85RS16N Datasheet, PDF (17/36 Pages) Fujitsu Component Limited. – 16 K (2 K × 8) Bit SPI | |||
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MB85RS16N
â POWER ON/OFF SEQUENCE
tpd
tf
VDD
2.7 V
VIH (Min)
tr
tpu
VDD
2.7 V
VIH (Min)
1.0 V
VIL (Max)
1.0 V
VIL (Max)
GND
CS
CS >VDD Ã 0.8 *
* : CS (Max) < VDD + 0.3 V
CS : don't care
CS >VDD Ã 0.8 *
CS
GND
Parameter
CS level hold time at power OFF
CS level hold time at power ON
Power supply falling time
Symbol
tpd
tpu
tf
Value
Min
Max
400
â¯
0.1
â¯
100
â¯
Unit
ns
ms
μs/V
Power supply rising time
tr
30
â¯
μs/V
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
â FRAM CHARACTERISTICS
Item
Read/Write Endurance*1
Data Retention*2
Min
1010
1012
10
95
⥠200
Max
Unit
Parameter
â¯
Operation Ambient Temperature TA = + 95 °C
Times/byte
â¯
Operation Ambient Temperature TA = + 85 °C
â¯
Operation Ambient Temperature TA = + 95 °C
â¯
Years Operation Ambient Temperature TA = + 55 °C
â¯
Operation Ambient Temperature TA = + 35 °C
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates
with destructive readout mechanism.
*2 : Minimum values define retention time of the first reading/writing data right after shipment, and these values
are calculated by qualification results.
â NOTE ON USE
We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed.
DS501-00030-3v0-E
17
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