MB85RS16N Datasheet, PDF (13/36 Pages) Fujitsu Component Limited. – 16 K (2 K × 8) Bit SPI

MB85RS16N
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Condition
Value
Unit
Min
Typ
Max
0 V ≤ CS < VDD
⎯
⎯
200
Input leakage current
|ILI| ^{CS = VDD}
⎯
⎯
10
μA
WP, HOLD, SCK,
SI = 0 V to VDD
⎯
⎯
10
Output leakage current
|ILO| SO = 0 V to VDD
⎯
⎯
10
μA
Operating power supply current
SCK = 10 MHz
IDD
SCK = 20 MHz
⎯
0.75
⎯
mA
⎯
1.5
2.4
mA
Standby current
ISB SCK = SI = CS = VDD
⎯
5@25 °C
15@85 °C
20@95 °C
μA
Input high voltage
VIH VDD = 2.7 V to 3.6 V VDD × 0.8
⎯
VDD + 0.3 V
Input low voltage
VIL VDD = 2.7 V to 3.6 V
− 0.5
⎯
VDD × 0.2 V
Output high voltage
VOH IOH = −2 mA
VDD − 0.5
⎯
VDD
V
Output low voltage
VOL IOL = 2 mA
VSS
⎯
0.4
V
Pull up resistance for CS
RP
⎯
18
33
80
kΩ
DS501-00030-3v0-E
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