MB85RS16N Datasheet, PDF (1/36 Pages) Fujitsu Component Limited. – 16 K (2 K × 8) Bit SPI

FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
DS501-00030-3v0-E
16 K (2 K × 8) Bit SPI
MB85RS16N
■ DESCRIPTION
MB85RS16N is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words ×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
MB85RS16N adopts the Serial Peripheral Interface (SPI).
The MB85RS16N is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS16N can be used for 10¹⁰ read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E²PROM.
MB85RS16N does not take long time to write data like Flash memories or E²PROM, and MB85RS16N takes
no wait time.
■ FEATURES
• Bit configuration
: 2,048 words × 8 bits
• Serial Peripheral Interface
: SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Operating frequency
: 20 MHz (Max)
• High endurance
: 10¹⁰ Read/Writes per byte ( + 95 °C)
10¹² Read/Writes per byte ( + 85 °C)
• Data retention
: 10 years ( + 95 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
• Operating power supply voltage : 2.7 V to 3.6 V
• Low power consumption
: Operating power supply current 1.5 mA (Typ@20 MHz)
Standby current 5 μA (Typ@+25 °C)
• Operation ambient temperature range : − 40 °C to + 95 °C
• Package
: 8-pin plastic SOP (FPT-8P-M02)
8-pin plastic SON (LCC-8P-M04)
RoHS compliant
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2015.6