MB85RS256 Datasheet, PDF (12/19 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 256 K (32 K × 8) Bit SPI

MB85RS256
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Symbol
Condition
Input leakage current
Output leakage current
Operating power supply current
Standby current
Output high voltage
Output low voltage
ILI
VIN = 0 V to VDD
ILO
VOUT = 0 V to VDD
IDD
SCK = 15 MHz
ISB
All inputs VSS or
SCK = SI = CS = VDD
VOH
IOH = −0.1 mA
VOL
IOL = 2 mA
(within recommended operating conditions)
Value
Unit
Min
Typ
Max
⎯
⎯
10
µA
⎯
⎯
10
µA
⎯
5
10
mA
⎯
3
50
µA
VDD × 0.8
⎯
⎯
⎯
⎯
V
0.4
V
12