MB85RS256 Datasheet, PDF (1/19 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 256 K (32 K × 8) Bit SPI

FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
256 K (32 K × 8) Bit SPI
MB85RS256
DS05-13105-2E
■ DESCRIPTION
MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits,
using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory
cells.
MB85RS256 adopts the Serial Peripheral Interface (SPI).
Unlike SRAM, MB85RS256 is able to retain data without back-up battery.
The memory cells used for the MB85RS256 has improved at least 10¹⁰ times of read/write operation significantly
outperforming Flash memory and E²PROM in the number.
MB85RS256 does not take long time to write data unlike Flash memories nor E²PROM, and MB85RS256 takes
no wait time.
■ FEATURES
• Bit configuration
: 32,768 × 8 bits
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating frequency
: 15 MHz (Max)
• Serial Peripheral Interface
: SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Operating temperature range : −20 °C to +85 °C
• Data retention
: 10 years (+55 °C)
• High endurance 10 Billion Read/writes (Min)
• Package
: 8-pin plastic SOP (FPT-8P-M02)
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