MB85RS256 Datasheet, PDF (11/19 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 256 K (32 K × 8) Bit SPI

MB85RS256
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Power supply voltage
Input voltage
Output voltage
Operating temperature
Storage temperature
Symbol
VDD
VIN
VOUT
TA
Tstg
Rating
Unit
Min
Max
− 0.5
+ 4.0
V
− 0.5
VDD + 0.5
V
− 0.5
VDD + 0.5
V
− 20
+ 85
°C
− 20
+ 85
°C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Power supply voltage
Input high voltage
Input low voltage
Operating temperature
Symbol
VDD
VIH
VIL
TA
Min
3.0
0.8 × VDD
− 0.5
− 20
Value
Typ
3.3
⎯
⎯
⎯
Max
3.6
VDD + 0.5
+ 0.6
+ 85
Unit
V
V
V
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
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