MB85RC64TAPNF-G Datasheet, PDF (1/28 Pages) Fujitsu Component Limited. – 64 K (8 K × 8) Bit I2C

FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
64 K (8 K × 8) Bit I²C
MB85RC64TA
DS501-00044-2v0-E
■ DESCRIPTION
The MB85RC64TA is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be
at least 10¹³ cycles, significantly outperforming Flash memory and E²PROM in the number.
The MB85RC64TA does not need a polling sequence after writing to the memory such as the case of Flash
memory or E²PROM.
■ FEATURES
• Bit configuration
: 8,192 words × 8 bits
• Two-wire serial interface
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency
: 3.4 MHz (Max @HIGH SPEED MODE)
1 MHz (Max @FAST MODE PLUS)
• Read/write endurance
: 10¹³ times / byte
• Data retention
: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
• Operating power supply voltage : 1.8 V to 3.6 V
• Low power consumption
: Operating power supply current 170 μA (Typ @3.4 MHz)
Standby current 8 μA (Typ)
Sleep current 4 μA (Typ)
• Operation ambient temperature range : − 40 °C to + 85 °C
• Package
: 8-pin plastic SOP (FPT-8P-M09)
8-pin plastic SON (LCC-8P-M04)
RoHS compliant
Copyright 2016 FUJITSU SEMICONDUCTOR LIMITED
2016.10