MRF7S21170HR3_11 Datasheet, PDF (9/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

f = 2220 MHz
Z_load
f = 2060 MHz
Z_o = 10 Ω
Z_source
f = 2220 MHz
f = 2060 MHz
V_DD = 28 Vdc, I_DQ = 1400 mA, P_out = 50 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2060
4.57 -- j10.70
1.02 -- j3.54
2080
4.57 -- j10.38
0.99 -- j3.34
2100
4.57 -- j10.06
0.96 -- j3.14
2120
4.52 -- j9.72
0.93 -- j2.94
2140
4.40 -- j9.42
0.92 -- j2.76
2160
4.15 -- j9.12
0.91 -- j2.59
2180
4.44 -- j8.82
0.89 -- j2.42
2200
4.19 -- j8.53
0.88 -- j2.25
2220
4.12 -- j8.23
0.88 -- j2.09
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
9