MRF7S21170HR3_11 Datasheet, PDF (7/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
--10
V_DD = 28 Vdc, I_DQ = 1400 mA
f1 = 2135 MHz, f2 = 2145 MHz
--20 _{Two--Tone Measurements, 10 MHz Tone Spacing}
--30
--40
3rd Order
--50
--60
1
5th Order
7th Order
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 170 W (PEP), I_DQ = 1400 mA
--10 ^{Two--Tone Measurements}
(f1 + f2)/2 = Center Frequency of 2140 MHz
--20
IM3--L
--30
IM3--U
--40
IM5--U
--50
IM5--L ^{IM7--U IM7--L}
--60
1
10
100
TWO--TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
54
0
Ideal ₄₈
--1
42
--1 dB = 43.335 W
--2
36
--2 dB = 61.884 W
--3
30
--3 dB = 83.111 W
Actual
--4
24
V_DD = 28 Vdc, I_DQ = 1400 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
--5
18
20
40
60
80
100
120
P_out, OUTPUT POWER (WATTS)
Figure 9. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
--20
V_DD = 28 Vdc, I_DQ = 1400 mA, f = 2140 MHz Single--Carrier
W--CDMA, Input Signal PAR = 7.5 dB, ACPR @ ±5 MHz
--30 Offset in 3.84 MHz Integrated Bandwidth
Uncorrected, Upper and Lower
--40
DPD Corrected
No Memory Correction
--50
--60
DPD Corrected, with Memory Correction
--70
40 41 42 43 44 45 46 47 48 49 50
P_out, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
19
18 ^Gps
17
16
T_C = --30_C
25_C
85_C
60
--30_C
25_C
50
85_C
40
30
15
20
14
η_D
13
1
V_DD = 28 Vdc
I_DQ = 1400 mA
f = 2140 MHz
10
100
10
0
400
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
7