MRF7S21170HR3_11 Datasheet, PDF (10/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
61
60
Ideal
P6dB = 53.89 dBm (244 W)
59
58
P3dB = 53.56 dBm (226 W)
57
56 _{P1dB = 52.75 dBm}
55 (188 W)
54
53
Actual
52
V_DD = 28 Vdc, I_DQ = 1400 m, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
51
32 33 34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P3dB
4.43 -- j11.85
0.81 -- j2.87
Figure 16. Pulsed CW Output Power
versus Input Power @ 28 V
62
61
Ideal
P6dB = 54.88 dBm (307 W)
60
59
58
P3dB = 54.65 dBm (290 W)
57
56 _{P1dB = 53.54 dBm}
55 (226 W)
54
Actual
53
V_DD = 32 Vdc, I_DQ = 1400 mA, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
52
33 34 35 36 37 38 39 40 41 42 43 44 45
P_in, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P3dB
4.43 -- j11.85
0.72 -- j2.87
Figure 17. Pulsed CW Output Power
versus Input Power @ 32 V
MRF7S21170HR3 MRF7S21170HSR3
10
RF Device Data
Freescale Semiconductor