MRF7S21170HR3_11 Datasheet, PDF (16/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

REVISION HISTORY (continued)
Revision
5
6
Date
Apr. 2008
Mar. 2011
Description
• Corrected On Characteristics table I_D value for V_GS(th) from 270 μAdc to 372 μAdc and V_DS(on) from
2.7 Adc to 3.72 Adc; tightened V_GS(th) minimum and maximum values to match production
test values, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test
Signal, to better represent production test signal, p. 8
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
• Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
• Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14
respectively after Fig. 13 removed)
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 15
MRF7S21170HR3 MRF7S21170HSR3
16
RF Device Data
Freescale Semiconductor