MRF7S21170HR3_11 Datasheet, PDF(2/17 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF7S21170HR3_11 Datasheet, PDF (2/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1A (Minimum)

Machine Model (per EIA/JESD22--A115)

B (Minimum)

Charge Device Model (per JESD22--C101)

IV (Minimum)

Table 4. Electrical Characteristics (TA = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

IGSS

Î¼Adc

500

nAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 372 Î¼Adc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 1400 mAdc)

Fixture Gate Quiescent Voltage (1)

(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(VGS = 10 Vdc, ID = 3.72 Adc)

Dynamic Characteristics (2)

Reverse Transfer Capacitance

(VDS = 28 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 28 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

VGS(th)

1.2

2.7

Vdc

VGS(Q)

2.7

Vdc

VGG(Q)

4.5

5.4

6.5

Vdc

VDS(on)

0.1

0.15

0.3

Vdc

Crss

0.9

Coss

703

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 2167.5 MHz,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ Â±5 MHz Offset.

Power Gain

Gps

Drain Efficiency

Î·D

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

5.7

6.1

Adjacent Channel Power Ratio

ACPR

--37

--35

dBc

Input Return Loss

IRL

--15

--9

1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

2. Part internally matched both on input and output.

(continued)

MRF7S21170HR3 MRF7S21170HSR3

RF Device Data

Freescale Semiconductor

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