MRF7S21110HR3 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 10 Ω
f = 2220 MHz
Z_load
f = 2060 MHz
f = 2220 MHz
Z_source ^{f = 2060 MHz}
V_DD = 28 Vdc, I_DQ = 1100 mA, P_out = 33 W Avg.
f
MHz
Z_source
W
Z_load
W
2060
2.2 - j5.1
2.3 - j4.0
2080
2.2 - j5.0
2.2 - j3.9
2100
2.1 - j4.9
2.1 - j3.8
2120
2.1 - j4.8
2.1 - j3.7
2140
2.1 - j4.7
2.0 - j3.5
2160
2.0 - j4.5
2.0 - j3.4
2180
2.0 - j4.4
2.0 - j3.3
2200
2.0 - j4.3
1.8 - j3.1
2220
2.0 - j4.2
1.8 - j3.0
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF7S21110HR3 MRF7S21110HSR3
9