MRF7S21110HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
17.6
36
17.4
35
G_ps
17.2
η_D
34
17
33
16.8
V_DD = 28 Vdc, P_out = 33 W (Avg.), I_DQ = 1100 mA
16.6 _{Single−Carrier W−CDMA, 3.84 MHz Channel}
16.4 ^{Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%}
Probability on CCDF
16.2
32
0
0
−0.5
−4
−1
−8
16
PARC
−1.5
−12
15.8
IRL
15.6
−2
−16
−2.5
−20
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 33 Watts Avg.
16.6
50
16.4
G_ps
49
16.2
η_D
48
16
47
15.8
46
15.6
V_DD = 28 Vdc, P_out = 70 W (Avg.), I_DQ = 1100 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
−2
0
15.4 ^{Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%}
Probability on CCDF
15.2
−2.5
−4
−3
−8
PARC
15
IRL
14.8
−3.5
−12
−4
−16
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 70 Watts Avg.
19
I_DQ = 1650 mA
18 _{1375 mA}
1100 mA
17
825 mA
16
550 mA
15
14
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
13
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
I_DQ = 550 mA
825 mA
−40
1375 mA
350 mA
−50
1100 mA
−60
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S21110HR3 MRF7S21110HSR3
6
RF Device Data
Freescale Semiconductor