MRF7S21110HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 1100 mA
−20 ^{f1 = 2135 MHz, f2 = 2145 MHz}
Two−Tone Measurements, 10 MHz Tone Spacing
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 90 W (PEP), I_DQ = 1100 mA
−10 ^{Two−Tone Measurements}
(f1 + f2)/2 = Center Frequency of 2140 MHz
−20
−30
IM3−L
−40
IM3−U
IM5−U
−50
IM7−U ^IM5−L
IM7−L
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
60
Ideal
0
55
−1
50
−2 _{−1 dB = 31.27 W}
45
−3 _{−2 dB = 45.15 W}
−4
−5
20
40
−3 dB = 75 W
40
Actual
V_DD = 28 Vdc, I_DQ = 1100 mA
35
f = 2140 MHz, Input Signal PAR = 7.5 dB
30
60
80
100
P_out, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
0 _{VDD = 28 Vdc, IDQ = 1100 mA, f = 2140 MHz, Single−Carrier}
−10 ^{W−CDMA, Input Signal PAR = 7.5 dB, ACPR @}
±5 MHz Offset in 3.84 MHz Integrated Bandwidth
−20
Uncorrected, Upper and Lower
−30
DPD Corrected
−40 ^{No Memory Correction}
−50
−60
DPD Corrected
with Memory Correction
−70
36
38
40
42
44
46
48
50
P_out, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
19
18 G_ps
17
16
15
T_C = −30_C
25_C
85_C
70
−30_C
25_C ⁶⁰
85_C ⁵⁰
40
30
14
13 _ηD
12
1
20
V_DD = 28 Vdc
I_DQ = 1100 mA
10
f = 2140 MHz
0
10
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
RF Device Data
Freescale Semiconductor
MRF7S21110HR3 MRF7S21110HSR3
7