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MRF7S21110HR3 Datasheet, PDF (3/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 2110 - 2170 MHz Bandwidth
Video Bandwidth @ 90 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
VBW
â
10
â
ÎIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 60 MHz Bandwidth @ Pout = 33 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 110 W CW
Average Group Delay @ Pout = 110 W CW, f = 2140 MHz
Part - to - Part Insertion Phase Variation @ Pout = 110 W CW,
f = 2140 MHz, Six Sigma Window
GF
â
0.325
â
Φ
â
0.772
â
Delay
â
1.9
â
ÎΦ
â
39.7
â
Gain Variation over Temperature
( - 30°C to +85°C)
ÎG
â
0.011
â
Output Power Variation over Temperature
( - 30°C to +85°C)
ÎP1dB
â
0.028
â
Unit
MHz
dB
°
ns
°
dB/°C
dBm/°C
RF Device Data
Freescale Semiconductor
MRF7S21110HR3 MRF7S21110HSR3
3
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