MRF7S21110HR3 Datasheet, PDF (11/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
Sept. 2007
July 2008
Description
• Initial Release of Data Sheet
• Added Input Signal in front of PAR for consistency throughout data sheet p. 2, 6, 7, 8
• Corrected Table 4, Typical Performances, Output Power Variation over Temperature value from 0.276 to
0.028, p. 3
• Updated Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test
Signal, to better represent production test signal, p. 8
RF Device Data
Freescale Semiconductor
MRF7S21110HR3 MRF7S21110HSR3
11