MRF7S16150HR3 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 1700 MHz
Z_o = 5 Ω
Z_load
f = 1500 MHz
f = 1700 MHz
Z_source
f = 1500 MHz
V_DD = 28 Vdc, I_DQ = 1500 mA, P_out = 32 W Avg.
f
MHz
Z_source
W
Z_load
W
1500
1.09 - j3.76
1.00 - j2.35
1520
1.06 - j3.62
0.96 - j2.19
1540
1.04 - j3.48
0.93 - j2.03
1560
1.01 - j3.34
0.91 - j1.88
1580
0.99 - j3.21
0.88 - j1.74
1600
0.96 - j3.07
0.86 - j1.60
1620
0.94 - j2.94
0.83 - j1.46
1640
0.92 - j2.81
0.81 - j1.33
1660
0.90 - j2.69
0.79 - j1.20
1680
0.88 - j2.56
0.77 - j1.07
1700
0.86 - j2.44
0.76 - j0.95
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF7S16150HR3 MRF7S16150HSR3
9