MRF7S16150HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 1500 mA
−20 ^{f1 = 1625 MHz, f2 = 1635 MHz}
Two−Tone Measurements, 10 MHz Tone Spacing
−30
−40
3rd Order
−50
5th Order
−60
−70
1
7th Order
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 180 W (PEP), I_DQ = 1500 mA
−10 ^{Two−Tone Measurements}
(f1 + f2)/2 = Center Frequency of 1630 MHz
−20
−30
IM5−U
−40
IM5−L
−50 ^IM7−U
IM3−U
IM3−L
IM7−L
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
60
55 ^{VDD = 28 Vdc, IDQ = 1500 mA}
50
f = 1630 MHz, 802.16d, 64 QAM ³/₄
4 Bursts, 7 MHz Channel
45 _{Bandwidth, Input Signal PAR = 9.5 dB}
40 @ 0.01% Probability on CCDF
35
30
25 _Gps
20
15 _ACPR
10
5
η_D
0
1
10
85_C
−15
−30_C _{25_C −20}
−25
−30
−30_C _−35
−40
−45
T_C = −30_C
−50
−55
85_C
−60
25_C ^−65
−70
−75
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
21
20
19
G_ps
18
17
T_C = −30_C
25_C
85_C
70
−30_C
25_C ⁶⁰
50
40
85_C
30
16
20
15
η_D
14
V_DD = 28 Vdc
I_DQ = 1500 mA
10
f = 1630 MHz
0
1
10
100
400
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
21
I_DQ = 1500 mA
20
f = 1630 MHz
19
18
17
28 V
32 V
16
V_DD = 24 V
15
0
100
200
300
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRF7S16150HR3 MRF7S16150HSR3
7