MRF7S16150HR3 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
IC (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 348 μAdc)
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_D = 1500 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 3.48 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 28 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
V_GS(th)
1.2
2
2.7
Vdc
V_GS(Q)
2
2.7
3.5
Vdc
V_DS(on)
0.1
0.2
0.3
Vdc
C_rss
—
1.09
—
pF
C_oss
—
585
—
pF
C_iss
—
363
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1500 mA, P_out = 32 W Avg., f = 1600 MHz and f =
1660 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM ³/₄, 4 bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Power Gain
G_ps
18.5
19.7
21.5
dB
Drain Efficiency
η_D
24
25.4
—
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
7.7
8.2
—
dB
Adjacent Channel Power Ratio
ACPR
- 58
- 47.5
- 45
dBc
Input Return Loss
IRL
—
- 12.1
-7
dB
1. Part internally matched both on input and output.
(continued)
MRF7S16150HR3 MRF7S16150HSR3
2
RF Device Data
Freescale Semiconductor