MRF7S16150HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
24
30
23
η_D
28
22
26
21
24
20 _Gps
22
19
V_DD = 28 Vdc, P_out = 32 W (Avg.), I_DQ = 1500 mA, ^−24
0
18
802.16d, 64 QAM ³/_4, 4 Bursts, 7 MHz Channel
−30
−4
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
17
Probability on CCDF
−36
−8
IRL
16
−42
−12
15
ACPR
−48
−16
14
−54
−20
1560 1580 1600 1620 1640 1660 1680 1700
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance
@ P_out = 32 Watts Avg.
24
η_D
40
23
38
22
36
21
34
20 _Gps
32
19
V_DD = 28 Vdc, P_out = 64 W (Avg.), I_DQ = 1500 mA
−20
0
18
802.16d, 64 QAM ³/_4, 4 Bursts, 7 MHz Channel
−25
−4
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
17
Probability on CCDF
−30
−8
IRL
16
−35
−12
15
ACPR
14
−40
−16
−45
−20
1560 1580 1600 1620 1640 1660 1680 1700
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance
@ P_out = 64 Watts Avg.
21
20 ^{1875 mA}
1500 mA
19
1125 mA
18
I_DQ = 2250 mA
750 mA
17
V_DD = 28 Vdc, I_DQ = 1500 mA
f1 = 1625 MHz, f2 = 1635 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
16
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
0
V_DD = 28 Vdc, I_DQ = 1500 mA
−10 ^{f1 = 1625 MHz, f2 = 1635 MHz}
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
I_DQ = 375 mA
−40
937.5 mA
−50
562.5 mA
1500 mA 750 mA
−60
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S16150HR3 MRF7S16150HSR3
6
RF Device Data
Freescale Semiconductor