MRF7S16150HR3 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
10⁸
10⁷
10⁶
10⁵
90
110 130 150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 32 W Avg., and η_D = 25.4%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
WIMAX TEST SIGNAL
100
10
Input Signal
1
0.1
0.01
0.001
0.0001
802.16d, 64 QAM ³/₄, 4 Bursts, 7 MHz
Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 13. OFDM 802.16d Test Signal
−10
−20
10 MHz
Channel BW
−30
−40
−50
−60
−70
−80
−90
−20
ACPR in 1 MHz
Integrated BW
−15 −10 −5
ACPR in 1 MHz
Integrated BW
0
5
10 15 20
f, FREQUENCY (MHz)
Figure 14. WiMAX Spectrum Mask Specifications
MRF7S16150HR3 MRF7S16150HSR3
8
RF Device Data
Freescale Semiconductor