MRF6V12250HR3 Datasheet, PDF (9/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 960--1215 MHz
26
V_DD = 50 Vdc
I_DQ = 100 mA
24 Pulse Width = 128 μsec
Duty Cycle = 10%
22
η_D
20
18
70
f = 1215 MHz
1150 MHz
60
1030 MHz
960 MHz
50
1215 MHz _{1150 MHz}
40
G_ps
960 MHz
30
1030 MHz
16
20
0
50 100 150 200 250 300 350
P_out, OUTPUT POWER (WATTS) PULSED
Figure 14. Pulsed Power Gain and Drain Efficiency
versus Output Power
21
68
20
66
G_ps
19
64
18
η_D
62
17
60
16
58
15
0
14
IRL
--5
13
--10
12
V_DD = 50 Vdc, I_DQ = 100 mA, P_out = 250 W Peak (25 W Avg.)
Pulse Width = 128 μsec, Duty Cycle = 10%
--15
11
--20
950 975 1000 1025 1050 1075 1100 1125 1150 1175 1200 1225
f, FREQUENCY (MHz)
Figure 15. Broadband Performance @ P_out = 250 Watts Peak
RF Device Data
Freescale Semiconductor
MRF6V12250HR3 MRF6V12250HSR3
9