MRF6V12250HR3 Datasheet, PDF (5/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
1000
C_iss
C_oss
100
10
1
Measured with ±30 mV(rms)ac @ 1 MHz
0.1 ^{VGS = 0 Vdc}
0
10
20
30
C_rss
40
50
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
160
140
120
P_out = 250 W
100
P_out = 275 W
80
P_out = 200 W
60
40
20
V_DD = 50 Vdc, I_DQ = 100 mA
f = 1030 MHz, Pulse Width = 128 μsec
0
0
5
10 15 20 25 30 35 40
DUTY CYCLE (%)
Figure 4. Safe Operating Area
24
70
22
60
G_ps
20
50
η_D
18
40
V_DD = 50 Vdc, I_DQ = 100 mA, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
16
50
100
30
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
60
59
P3dB = 55.29 dBm (338 W)
Ideal
58
57 P1dB = 54.76 dBm (299 W)
56
55
Actual
54
53
52
51
50
V_DD = 50 Vdc, I_DQ = 100 mA, f = 1030 MHz
49
Pulse Width = 128 μsec, Duty Cycle = 10%
48
28
30
32
34
36
38
40
P_in, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
22
I_DQ = 400 mA
21
20
100 mA 200 mA ^{300 mA}
19
18
V_DD = 50 Vdc, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
17
50
100
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
22
I_DQ = 100 mA, f = 1030 MHz
21 ^{Pulse Width = 128 μsec}
Duty Cycle = 10%
20
19
18
17
16
40 V ^{45 V 50 V}
V_DD = 30 V 35 V
15
50
100
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6V12250HR3 MRF6V12250HSR3
5