MRF6V12250HR3 Datasheet, PDF (6/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
400
24
T_C = --30_C
72
--30_C
25_C
300
55_C
85_C
22
G_ps
T_C = --30_C
85_C _{25_C 60}
55_C
25_C
200
20
48
100
V_DD = 50 Vdc, I_DQ = 100 mA, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
0
0
1
2
3
4
5
6
P_in, INPUT POWER (WATTS) PULSED
Figure 9. Pulsed Output Power versus
Input Power
85_C ^55_C
18
36
η_D
16
50
V_DD = 50 Vdc, I_DQ = 100 mA, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
100
24
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
10⁹
10⁸
10⁷
10⁶
10⁵
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 50 Vdc, P_out = 275 W Peak, Pulse Width = 128 μsec,
Duty Cycle = 10%, and η_D = 65.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
MRF6V12250HR3 MRF6V12250HSR3
6
RF Device Data
Freescale Semiconductor