MRF6V12250HR3 Datasheet, PDF(2/13 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF6V12250HR3 Datasheet, PDF (2/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2 (Minimum)

Machine Model (per EIA/JESD22--A115)

B (Minimum)

Charge Device Model (per JESD22--C101)

IV (Minimum)

Table 4. Electrical Characteristics (TA = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

Drain--Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 mA)

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 90 Vdc, VGS = 0 Vdc)

IGSS

Î¼Adc

V(BR)DSS

110

Vdc

IDSS

Î¼Adc

IDSS

100

Î¼Adc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 662 Î¼Adc)

Gate Quiescent Voltage

(VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(VGS = 10 Vdc, ID = 1.6 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 50 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 50 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Input Capacitance

(VDS = 50 Vdc, VGS = 0 Vdc Â± 30 mV(rms)ac @ 1 MHz)

VGS(th)

0.9

1.7

2.4

Vdc

VGS(Q)

1.7

2.4

3.2

Vdc

VDS(on)

0.25

Vdc

Crss

0.46

Coss

352

Ciss

695

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 W Avg.), f = 1030 MHz,

Pulsed, 128 Î¼sec Pulse Width, 10% Duty Cycle

Power Gain

Drain Efficiency

Gps

20.3

Î·D

65.5

Input Return Loss

IRL

--14

--9

Typical Broadband Performance â 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc,

IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 960--1215 MHz, Pulsed, 128 Î¼sec Pulse Width, 10% Duty Cycle

Power Gain

Gps

19.8

Drain Efficiency

Î·D

1. Part internally matched both on input and output.

MRF6V12250HR3 MRF6V12250HSR3

RF Device Data

Freescale Semiconductor

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