MRF6V12250HR3 Datasheet, PDF (10/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Z_o = 10 Ω
Z_load
f = 1215 MHz
f = 960 MHz
f = 960 MHz
f = 1215 MHz
Z_source
V_DD = 50 Vdc, I_DQ = 100 mA, P_out = 250 W Peak
f
MHz
Z_source
Ω
Z_load
Ω
V_DD = 50 Vdc, I_DQ = 100 mA, P_out = 250 W Peak
f
MHz
Z_source
Ω
Z_load
Ω
960
4.00 -- j4.14 3.96 -- j1.70
1100
5.49 -- j3.04 3.32 -- j1.43
970
4.05 -- j3.99 3.90 -- j1.67
1110
5.47 -- j3.07 3.31 -- j1.42
980
4.16 -- j3.86 3.83 -- j1.66
1120
5.52 -- j3.09 3.24 -- j1.40
990
4.33 -- j3.71 3.75 -- j1.66
1130
5.68 -- j3.13 3.12 -- j1.39
1000
4.49 -- j3.57 3.70 -- j1.65
1140
5.89 -- j3.20 2.99 -- j1.36
1010
4.61 -- j3.43 3.68 -- j1.62
1150
6.06 -- j3.32 2.88 -- j1.30
1020
4.66 -- j3.33 3.69 -- j1.59
1160
6.09 -- j3.47 2.83 -- j1.23
1030
4.68 -- j3.26 3.69 -- j1.54
1170
5.98 -- j3.60 2.83 -- j1.19
1040
4.72 -- j3.20 3.67 -- j1.52
1180
5.85 -- j3.69 2.80 -- j1.15
1050
4.83 -- j3.13 3.59 -- j1.53
1190
5.78 -- j3.76 2.75 -- j1.11
1060
5.02 -- j3.06 3.48 -- j1.53
1200
5.81 -- j3.87 2.65 -- j1.07
1070
5.24 -- j2.99 3.38 -- j1.53
1210
5.89 -- j4.02 2.52 -- j1.01
1080
5.42 -- j2.96 3.32 -- j1.51
1215
5.91 -- j4.11 2.47 -- j0.97
1090
5.51 -- j2.99 3.30 -- j1.47
Z_source = Test circuit impedance as measured from gate to ground.
Z_load = Test circuit impedance as measured from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance — 960--1215 MHz
MRF6V12250HR3 MRF6V12250HSR3
10
RF Device Data
Freescale Semiconductor