MRF6V10010NR4 Datasheet, PDF (9/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
Date
June 2008
Feb. 2009
June 2009
July 2010
Description
• Initial Release of Data Sheet
• Corrected Z_source, “2.57 -- j7.33” to “1.15 + j8.96” and Z_load, “14.10 -- j34.77” to “13.47 + j34.32” in Fig. 11,
Series Equivalent Source and Load Impedance data table and replotted data, p. 7
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 2
• Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 9
• Reporting of pulsed thermal data now shown using the Z_θJC symbol, Table 2, Thermal Characteristics, p. 1
• Corrected errors made in the translation of the printed circuit board to the schematic, Fig. 1, Test Circuit
Schematic and Z list, p. 3
RF Device Data
Freescale Semiconductor
MRF6V10010NR4
9