MRF6V10010NR4 Datasheet, PDF (2/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
Drain--Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 7 mA)
Zero Gate Voltage Drain Leakage Current
(V_DS = 50 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
I_GSS
—
—
10
μAdc
V_(BR)DSS
100
—
—
Vdc
I_DSS
—
—
50
μAdc
I_DSS
—
—
2.5
mA
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 36 μAdc)
Gate Quiescent Voltage
(V_DD = 50 Vdc, I_D = 10 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V_GS = 10 Vdc, I_D = 70 mAdc)
V_GS(th)
1
1.7
2.5
Vdc
V_GS(Q)
1.7
2.4
3.2
Vdc
V_DS(on)
—
0.2
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 50 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C_rss
—
0.1
—
pF
C_oss
—
3.38
—
pF
C_iss
—
9.55
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 10 mA, P_out = 10 W Peak (2 W Avg.), f = 1090 MHz,
Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
G_ps
23
25
28
dB
Drain Efficiency
η_D
66
69
—
%
Input Return Loss
IRL
—
--12
--8
dB
MRF6V10010NR4
2
RF Device Data
Freescale Semiconductor