MRF6V10010NR4 Datasheet, PDF (5/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
100
10
Measured with ±30 mV(rms)ac @ 1 MHz
V_GS = 0 Vdc
10
C_iss
1
C_oss
1
T_J = 200°C
T_J = 175°C
T_J = 150°C
C_rss
0.1
0
10
20
30
40
50
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
27
75
G_ps
26
70
25
65
η_D
24
60
23
55
V_DD = 50 Vdc, I_DQ = 10 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
22
50
5
6
7
8
9
10
11 12
P_out, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
27
25
23
50 V
21
45 V
40 V
35 V
19
V_DD = 30 V
I_DQ = 10 mA, f = 1090 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
17
0
2
4
6
8
10
12
P_out, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
T_C = 25°C
0.1
1
10
100
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
45
P3dB = 40.66 dBm (11.65 W)
Ideal
P1dB = 40.18 dBm
(10.42 W)
40
Actual
V_DD = 50 Vdc, I_DQ = 10 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
35
12
13
14
15
16
17
18
19
P_in, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
14
T_C = --30_C
12
10
85_C
25_C
8
6
V_DD = 50 Vdc
4
I_DQ = 10 mA
f = 1090 MHz
2
Pulse Width = 100 μsec
Duty Cycle = 20%
0
0
0.01 0.02 0.03 0.04 0.05 0.06 0.07
P_in, INPUT POWER (WATTS) PULSED
Figure 8. Pulsed Output Power versus
Input Power
RF Device Data
Freescale Semiconductor
MRF6V10010NR4
5