MRF6V10010NR4 Datasheet, PDF (8/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PACKAGE DIMENSIONS
A
0.146
3.71
F
0.095
2.41
3
0.115
2.92
BD
1
Q
ZONE V
ZONE W
1
G
2R _L
0.115
2.92
4
N
0.35 (0.89) X 45_ 5_
K
10_DRAFT
0.020
0.51
inches
mm
SOLDER FOOTPRINT
U
H
C
4
2
3
S
ZONE X
VIEW Y--Y
P
Y
YE
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
CASE 466--03
ISSUE D
PLD--1.5
PLASTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN MAX
0.255 0.265
0.225 0.235
0.065 0.072
0.130 0.150
0.021 0.026
0.026 0.044
0.050 0.070
0.045 0.063
0.160 0.180
0.273 0.285
0.245 0.255
0.230 0.240
0.000 0.008
0.055 0.063
0.200 0.210
0.006 0.012
0.006 0.012
0.000 0.021
0.000 0.010
0.000 0.010
MILLIMETERS
MIN MAX
6.48 6.73
5.72 5.97
1.65 1.83
3.30 3.81
0.53 0.66
0.66 1.12
1.27 1.78
1.14 1.60
4.06 4.57
6.93 7.24
6.22 6.48
5.84 6.10
0.00 0.20
1.40 1.60
5.08 5.33
0.15 0.31
0.15 0.31
0.00 0.53
0.00 0.25
0.00 0.25
MRF6V10010NR4
8
RF Device Data
Freescale Semiconductor