MRF6V10010NR4 Datasheet, PDF (1/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
RF Power transistor designed for applications operating at frequencies
between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for
use in pulsed applications.
• Typical Pulsed Performance: V_DD = 50 Volts, I_DQ = 10 mA, P_out = 10 Watts
Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 25 dB
Drain Efficiency — 69%
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Document Number: MRF6V10010N
Rev. 3, 7/2010
MRF6V10010NR4
1090 MHz, 10 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 466--03, STYLE 1
PLD--1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
V_DSS
--0.5, +100
Vdc
V_GS
--6.0, +10
Vdc
T_stg
-- 65 to +150
°C
T_C
150
°C
T_J
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 10 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Z_θJC
1.6
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V10010NR4
1