MRF6S9160HR3_08 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Z_o = 2 Ω
f = 910 MHz
Z_load
f = 850 MHz
f = 910 MHz
Z_source
f = 850 MHz
V_DD = 28 Vdc, I_DQ = 1200 mA, P_out = 35 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
850
0.61 - j1.27
1.20 + j0.03
865
0.66 - j1.15
1.26 + j0.15
880
0.64 - j1.05
1.31 + j0.22
895
0.55 - j0.90
1.32 + j0.28
910
0.48 - j0.74
1.26 + j0.32
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9160HR3 MRF6S9160HSR3
9