MRF6S9160HR3_08 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
23
22
T_C = −30_C
G_ps
21
25_C
20
70
−30_C
85_C
60
50
40
19
85_C
30
η_D
18
20
17
16
1
V_DD = 28 Vdc
I_DQ = 1200 mA
10
f = 880 MHz
0
10
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
21
20
19
18
32 V
28 V
17
V_DD = 24 V
I_DQ = 1200 mA
f = 880 MHz
16
0
50
100
150
200
250
300
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁸
10⁷
10⁶
10⁵
90
110 130 150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 35 W Avg., and η_D = 30.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
7