MRF6S9160HR3_08 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 525 μAdc)
V_GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_D = 1200 mAdc, Measured in Functional Test)
V_GS(Q)
2
3
4
Vdc
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 3.6 Adc)
V_DS(on)
0.1
0.2
0.3
Vdc
Dynamic Characteristics ⁽¹⁾
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
80.2
—
pF
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
2.2
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1200 mA, P_out = 35 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G_ps
20
20.9
23
dB
Drain Efficiency
η_D
29
30.5
—
%
Adjacent Channel Power Ratio
ACPR
—
- 46.8
- 45
dBc
Input Return Loss
IRL
—
- 17
-9
dB
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1200 mA,
P_out = 76 W Avg., 865 MHz<Frequency<895 MHz
Power Gain
G_ps
—
20
—
Drain Efficiency
η_D
—
45
—
Error Vector Magnitude
EVM
—
2
—
dB
%
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 66
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 75
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1200 mA, P_out = 160 W,
921 MHz<Frequency<960 MHz
Power Gain
G_ps
—
20
—
dB
Drain Efficiency
η_D
—
58
—
%
Input Return Loss
IRL
—
- 12
—
dB
P_out @ 1 dB Compression Point, CW
(f = 940 MHz)
P1dB
—
160
—
W
1. Part is internally matched on input.
MRF6S9160HR3 MRF6S9160HSR3
2
RF Device Data
Freescale Semiconductor