MRF6S9160HR3_08 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
20.9
32
20.6
η_D
30
20.3
G_ps
28
20
26
19.7
V_DD = 28 Vdc, P_out = 35 W (Avg.)
24
19.4
I_DQ = 1200 mA, N−CDMA IS−95 (Pilot, Sync,
−40
−5
Paging, Traffic Codes 8 Through 13)
19.1
−45
−8
18.8 _ACPR
18.5
IRL
18.2 ^ALT1
−50
−11
−55
−14
−60
−17
17.9
−65
−20
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ P_out = 35 Watts Avg.
20.3
44
20
η_D
42
19.7
G_ps
40
19.4
38
19.1
V_DD = 28 Vdc, P_out = 70 W (Avg.)
18.8
I_DQ = 1200 mA, N−CDMA IS−95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
18.5
36
−30
−3
−36
−6
18.2
ACPR
−42
−9
17.9
IRL
−48
−12
17.6 ALT1
−54
−15
17.3
−60
−18
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ P_out = 70 Watts Avg.
23
22
I_DQ = 1800 mA
1500 mA
21
20
1200 mA
19
900 mA
18
600 mA
17
16
V_DD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
15
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
−20
−30
I_DQ = 600 mA
−40
−50 ^{1500 mA}
−60
900 mA
1800 mA
1200 mA
−70
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
5