MRF6S9160HR3_08 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
Document Number: MRF6S9160H
Rev. 2, 8/2008
MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device
Migration PCN12895 for more details.
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V_DD = 28 Volts,
I_DQ = 1200 mA, P_out = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.9 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 1200 mA,
P_out = 76 Watts Avg., Full Frequency Band (865 - 895 MHz)
Power Gain — 20 dB
Drain Efficiency — 45%
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 2% rms
GSM Application
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 1200 mA, P_out =
160 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 58%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S9160HR3
MRF6S9160HSR3
880 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S9160HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S9160HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
- 0.5, +68
Vdc
V_GS
- 0.5, +12
Vdc
T_stg
- 65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 160 W CW
Case Temperature 73°C, 35 W CW
R_θJC
0.31
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
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