MRF6S23140HR3 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 25 Ω
Z_source
f = 2300 MHz
f = 2400 MHz
f = 2300 MHz
Z_load
f = 2400 MHz
V_DD = 28 Vdc, I_DQ = 1300 mA, P_out = 28 W Avg.
f
MHz
Z_source
W
Z_load
W
2300
12.92 + j6.65
1.05 - j2.88
2310
13.06 + j6.73
1.04 - j2.82
2320
13.21 + j6.80
1.03 - j2.76
2330
13.37 + j6.87
1.01 - j2.70
2340
13.53 + j6.94
1.00 - j2.64
2350
13.70 + j7.01
0.99 - j2.58
2360
13.88 + j7.08
0.97 - j2.52
2370
14.06 + j7.14
0.96 - j2.46
2380
14.25 + j7.21
0.95 - j2.40
2390
14.45 + j7.27
0.94 - j2.34
2400
14.66 + j7.33
0.93 - j2.28
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S23140HR3 MRF6S23140HSR3
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