MRF6S23140HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
15.6
28
15.5
G_{ps 27}
15.4
26
V_DD = 28 Vdc
15.3 ^Pout ^{= 28 W (Avg.)}
I_DQ = 1300 mA, 2−Carrier W−CDMA
η_D
25
15.2 ^{10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth}
−34
−6
PAR = 8.5 dB @ 0.01% Probability (CCDF)
15.1
−36
−9
15
IM3
−38
−12
IRL
14.9
ACPR ^−40
−15
14.8
−42
−18
2270 2290 2310 2330 2350 2370 2390 2410 2430
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P_out = 28 Watts Avg.
15.1
38
15
37
14.9 V_DD = 28 Vdc
P_out = 56 W (Avg.)
14.8 _{IDQ = 1300 mA, 2−Carrier W−CDMA}
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
G_ps ³⁶
η_D ³⁵
14.7 PAR = 8.5 dB @ 0.01% Probability (CCDF)
−25
−6
14.6
−27
−9
IM3
14.5
IRL
−29
−12
14.4
ACPR _−31
−15
14.3
−33
−18
2270 2290 2310 2330 2350 2370 2390 2410 2430
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P_out = 56 Watts Avg.
18
17 ^IDQ ^{= 1950 mA}
16 1625 mA
1300 mA
15
975 mA
14
650 mA
13
12
V_DD = 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
11
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
−20 Two−Tone Measurements, 10 MHz Tone Spacing
−30
I_DQ = 650 mA
1950 mA
−40
1625 mA
−50
1300 mA
975 mA
−60
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
5