MRF6S23140HR3 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
I_DSS
—
I_GSS
—
—
10
μAdc
—
1
μAdc
—
500
nΑdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 μAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1300 mAdc)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 3 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
V_GS(th)
1
2
3
Vdc
V_GS(Q)
2
2.8
4
Vdc
V_DS(on)
0.1
0.21
0.3
Vdc
C_rss
—
2
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1300 mA, P_out = 28 W Avg., f1 = 2300 MHz,
f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G_ps
13
15.2
17
dB
Drain Efficiency
η_D
23
25
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
Adjacent Channel Power Ratio
ACPR
—
- 40
- 38
dBc
Input Return Loss
IRL
—
- 15
—
dB
1. Part internally matched both on input and output.
MRF6S23140HR3 MRF6S23140HSR3
2
RF Device Data
Freescale Semiconductor