MRF6S23140HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
0
V_DD = 28 Vdc, P_out = 140 W (PEP)
−10
I_DQ = 1300 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
−20
3rd Order
−30
5th Order
−40
−50
7th Order
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
59
P6dB = 53.51 dBm (224.39 W) Ideal
57
P3dB = 53.04 dBm (201.42 W)
55
P1dB = 52.22 dBm (162.72 W)
53
51
Actual
49
V_DD = 28 Vdc, I_DQ = 1300 mA
47
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2350 MHz
45
29 31 33 35 37 39 41 43
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
42
V_DD = 28 Vdc, I_DQ = 1300 mA
36 ^{f1 = 2345 MHz, f2 = 2355 MHz}
2−Carrier W−CDMA, 10 MHz
−30_C
30 ^{Carrier Spacing, 3.84 MHz Channel}
Bandwidth, PAR = 8.5 dB @ 0.01%
24 ^{Probability (CCDF)}
η_D
18
T_C = − 30_C Gps
−20
25_C
85_C _−25
−30_C
85_C
−30
25_C
−35
−30_C
−40
12
IM3
6
25_C
85_C
−45
ACPR
−50
0
0.5 1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
−55
300
MRF6S23140HR3 MRF6S23140HSR3
6
RF Device Data
Freescale Semiconductor