MRF6S23140HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

17
G_ps
16
T_C = −30_C
25_C
15
85_C
14
V_DD = 28 Vdc
13 I_DQ = 1300 mA
f = 2350 MHz
η_D
12
60
−30_C
25_C ₅₀
85_C
40
30
20
10
11
0.5 1
0
10
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus Output Power
10¹⁰
16
I_DQ = 1300 mA
f = 2350 MHz
15
14
13
20 V
24 V ^{28 V 32 V}
12
16 V
V_DD = 12 V
11
0
50
100
150
200
250
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
10⁹
10⁸
10⁷
90 100 110 120 130 140 150 160 170 180 190 200 210
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
7