MRF21085LSR3_08 Datasheet, PDF (9/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PACKAGE DIMENSIONS
4X U
(FLANGE)
B
4X Z
(LID)
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M − 1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
B
(FLANGE)
2
D
bbb M T A M
2X K
BM
H
E
A
N (LID)
ccc M T A M B M
M (INSULATOR)
bbb M T A M B M
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
C
3
F
A
(FLANGE)
T
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRF21085LSR3
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U − − − 0.040
Z − − − 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
− − − 1.02
− − − 0.76
0.127 REF
0.254 REF
0.381 REF
RF Device Data
Freescale Semiconductor
MRF21085LSR3
9